NV6245C
Description
This half-bridge GaNFast™ power IC integrates high performance eMode GaN FETs with integrated gate drive, control and protection to achieve unprecedented high- frequency and high efficiency operation.
Key Features
- GaNFast™ Power IC
- Wide VCC range (10 to 24 V)
- Floating high-side with internal level shift
- Two independent logic inputs with hysteresis
- Integrated high-side bootstrap
- Shoot-through protection
- Turn-on dV/dt slew rate control (low-side and high-side)
- 800 V transient voltage rating
- 650 V continuous voltage rating
- 275 mΩ high-side FET, 275 mΩ low-side FET
