Full PDF Text Transcription for P2003BVG (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
P2003BVG. For precise diagrams, and layout, please refer to the original PDF.
NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P2003BVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30 20m ID 8A D G S ABSOLUTE MAXIMUM RATINGS (TC = 25...
View more extracted text
V(BR)DSS RDS(ON) 30 20m ID 8A D G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 70 °C Power Dissipation TC = 25 °C TC = 70 °C Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) VDS VGS ID IDM PD Tj, Tstg TL THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1% TYPICAL G : GATE D : DRAIN S : SOURCE LIMITS 30 ±20 8 6 32 2.5 1.
P2003BVG Datasheet
