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P2003BVT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 20mΩ @VGS = 10V
ID 9A
SOP-8
100% Rg tested 100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current Pulsed Drain Current1
TA = 25 °C TA = 70 °C
ID IDM
9 7 35
Avalanche Current
IAS 8
Avalanche Energy
L =0.1mH
EAS
3.2
Power Dissipation
TA= 25 °C TA =70 °C
PD
2.5 1.6
Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.)
Tj, Tstg TL
-55 to 150 275
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
P2003BVT Datasheet
