UNIKC P2003BVT
N-Channel MOSFET
| Part No. | P2003BVT |
|---|---|
| Datasheet | P2003BVT Download |
| Manufacturer |  UNIKC |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 9 7 35 Avalanche Current IAS 8 Avalanche Energy L =0.1mH EAS 3.2 Power Dissipation TA= 25 °C TA =70 °C PD 2.5 1.6 Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) Tj, Tstg TL -55 to 150 275 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJA TYPICAL MAXIMUM UNITS 50 °C / W REV 1.0 1 2014/11/5 P2003BVT N-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS
(TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMI
