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P2003BE
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 20mΩ @VGS = 10V
ID 7A
PDFN 3x3S
ABSOLUTE MAXIMUM RATINGS (TJ = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC = 25 °C
25
Continuous Drain Current
TC = 100 °C TA = 25 °C
ID
15 7
Pulsed Drain Current1
TA = 70 °C
IDM
5.7 50
Avalanche Current
IAS 18
Avalanche Energy
L = 0.1mH
EAS
16
TC = 25 °C
21
Power Dissipation
TC = 100 °C TA = 25 °C
PD
8 1.7
TA = 70 °C
1
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS V
A
mJ W °C
REV 1.
P2003BE Datasheet
