UNIKC P2003BVG
N-Channel Enhancement Mode MOSFET
| Part No. | P2003BVG |
|---|---|
| Datasheet | P2003BVG Download |
| Manufacturer |  UNIKC |
| Description | N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 9 7 32 Avalanche Current IAS 18.5 Avalanche Energy L =0.1mH EAS 17 Power Dissipation TA= 25 °C TA =70 °C PD 2.5 1.6 Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient 1Pulse width limited by maximum junction temperature. SYMBOL RqJA TYPICAL MAXIMUM UNITS 50 °C / W REV 1.1 1 2015/11/11 P2003BVG N-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS
(TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS...
