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P2003BEA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 20mΩ @VGS = 10V
ID 10A
PDFN 3x3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage Gate-Source Voltage
TC = 25 °C
VDS VGS
30 ±20 28
Continuous Drain Current
Pulsed Drain Current1 Avalanche Current Avalanche Energy
TC = 100 °C TA = 25 °C TA = 70 °C
L = 0.1mH TC = 25 °C
ID
IDM IAS EAS
18 10 8 70 21.5 23 25
Power Dissipation
TC = 100 °C TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
PD TJ, TSTG
10 3.125
2 -55 to 150
UNITS V
A
mJ W °C
REV 1.
P2003BEA Datasheet
