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NIKO-SEM
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Dual N-Channel Enhancement Mode Field Effect Transistor
P5506HVG
SOP-8 Lead-Free
PRODUCT SUMMARY V(BR)DSS 60 RDS(ON) 55m ID 4.5A G : GATE D : DRAIN S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range
1
SYMBOL VDS VGS
LIMITS 60 ±20 4.5 4 20 2 1.3 -55 to 150
UNITS V V
TC = 25 °C TC = 70 °C
ID IDM
A
TC = 25 °C TC = 70 °C
PD Tj, Tstg
W °C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient
1 2
SYMBOL RθJA
TYPICAL
MAXIMUM 62.5
UNITS °C / W
Pulse width limited by maximum junction temperature.
P5506HVG Datasheet
