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NIKO-SEM
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N- & P-Channel Enhancement Mode Field Effect Transistor
P5506NVG
SOP-8 Lead-Free
PRODUCT SUMMARY V(BR)DSS N-Channel P-Channel 60 -55 RDS(ON) 55m 80m ID 4.5A -3.5A G : GATE D : DRAIN S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.) THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient
1 2 1 1
SYMBOL VDS VGS
N-Channel P-Channel 60 ±20 4.5 4 20 2 1.3 -55 to 150 275 -55 ±20 -3.5 -3 -20
UNITS V V
TC = 25 °C TC = 70 °C
ID IDM
A
TC = 25 °C TC = 70 °C
PD Tj, Tstg TL
W
°C
SYMBOL RθJA
TYPICAL
MAXIMUM 62.
P5506NVG Datasheet
