• Part: M29W160EB
  • Manufacturer: Numonyx
  • Size: 1.08 MB
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M29W160EB Key Features

  • SUPPLY VOLTAGE ..- VCC = 2.7V to 3.6V for Program, Erase and Read
  • ACCESS TIMES: 70, 90ns
  • PROGRAMMING TIME
  • 10µs per Byte/Word typical
  • 35 MEMORY BLOCKS
  • 1 Boot Block (Top or Bottom Location)
  • 2 Parameter and 32 Main Blocks
  • PROGRAM/ERASE CONTROLLER
  • Embedded Byte/Word Program algorithms
  • ERASE SUSPEND and RESUME MODES

Other M29W160EB Datasheets

Manufacturer Part Number Description
ST Microelectronics Logo STMicroelectronics M29W160EB 16 Mbit (2Mb x8 or 1Mb x16 / Boot Block) 3V Supply Flash Memory
ST Microelectronics Logo STMicroelectronics M29W160ET 16 Mbit (2Mb x8 or 1Mb x16 / Boot Block) 3V Supply Flash Memory
ST Microelectronics Logo STMicroelectronics M29W160BB 16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Low Voltage Single Supply Flash Memory
ST Microelectronics Logo STMicroelectronics M29W160BT 16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Low Voltage Single Supply Flash Memory
ST Microelectronics Logo STMicroelectronics M29W160DB 16 Mbit 2Mb x8 or 1Mb x16 / Boot Block 3V Supply Flash Memory

View all M29W160EB datasheets →

M29W160EB Description

6 TFBGA Connections (Top view through package) . 10 Address Inputs (A0-A19). 10 Data Inputs/Outputs (DQ0-DQ7).