M29W160EB Description
6 TFBGA Connections (Top view through package) . 10 Address Inputs (A0-A19). 10 Data Inputs/Outputs (DQ0-DQ7).
M29W160EB Key Features
- SUPPLY VOLTAGE
- VCC = 2.7V to 3.6V for Program, Erase and Read
- ACCESS TIMES: 70, 90ns
- PROGRAMMING TIME
- 10µs per Byte/Word typical
- 35 MEMORY BLOCKS
- 1 Boot Block (Top or Bottom Location)
- 2 Parameter and 32 Main Blocks
- PROGRAM/ERASE CONTROLLER
- Embedded Byte/Word Program algorithms