M29W160EB Overview
Key Features
- SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read
- ACCESS TIMES: 70, 90ns
- PROGRAMMING TIME – 10µs per Byte/Word typical
- 35 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 32 Main Blocks
- PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithms
- ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend
- UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming
- TEMPORARY BLOCK UNPROTECTION MODE
- COMMON FLASH INTERFACE – 64 bit Security Code
- LOW POWER CONSUMPTION – Standby and Automatic Standby
