M29W640FB Datasheet | Numonyx

Feature summary Supply voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) Asynchronous Random/Page Read – Page Width: 4 Words – Page Access: 25ns – Random Access: 60ns, 70ns Programming time – 10 s per Byte/Word typical – 4 Words / 8 Bytes Program 135 Memory Blocks – 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bottom location) – 127 Main Blocks, 64 KBytes each Program/Erase Controller – Embedded Byte/Word Program algorithms Program/Erase Suspend and Resume – Read from any Block during Program Suspend – Read and Program another Block during Erase Suspend Unlock Bypass Program mand – Faster Production/Batch Programming VPP/WP pin for Fast Program and Write Protect Temporary Block Unprotection mode mon Flash Interface – 64-bit Security Code Table 1. Device Codes Root Part Number M29W640FT M29W640FB TSOP48 (N) 12 x 20mm TFBGA48 (ZA) 6x8mm Extended Memory Block Extra block used as security block or to store additional information Low power consumption – Standby and Automatic Standby 100,000 Program/Erase cycles per block Electronic Signature – Manufacturer Code: 0020h ECOPACK® packages Device Code 22EDh 22FDh September 2008 Rev 8 1/71 .Numonyx. Contents Contents M29W640FT, M29W640FB Summary description - - - - - - - - 7 Signal descriptions - - - - - - - - . 11 2.1 Address Inputs...