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M29W800DB - 3V supply flash memory

Download the M29W800DB datasheet PDF. This datasheet also covers the M29W800DT variant, as both devices belong to the same 3v supply flash memory family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Supply voltage.
  • VCC = 2.7 V to 3.6 V for program, erase and read.
  • Access times: 45, 70, 90 ns.
  • Programming time.
  • 10 μs per byte/word typical.
  • 19 memory blocks.
  • 1 boot block (top or bottom location).
  • 2 parameter and 16 main blocks.
  • Program/erase controller.
  • Embedded byte/word program algorithms.
  • Erase suspend and resume modes.
  • Read and program another block during erase suspend.
  • U.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M29W800DT-Numonyx.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number M29W800DB
Manufacturer Numonyx
File Size 748.08 KB
Description 3V supply flash memory
Datasheet download datasheet M29W800DB Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
M29W800DT M29W800DB 8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory Features „ Supply voltage – VCC = 2.7 V to 3.