M29W800DT Key Features
- Supply voltage
- VCC = 2.7 V to 3.6 V for program, erase and read
- Access times: 45, 70, 90 ns
- Programming time
- 10 μs per byte/word typical
- 19 memory blocks
- 1 boot block (top or bottom location)
- 2 parameter and 16 main blocks
- Program/erase controller
- Embedded byte/word program algorithms
