M29W800DT - 3V supply flash memory

Numonyx

Key Features

Supply voltage.
VCC = 2.7 V to 3.6 V for program, erase and read.
Access times: 45, 70, 90 ns.
Programming time.
10 μs per byte/word typical.
19 memory blocks.
1 boot block (top or bottom location).
2 parameter and 16 main blocks.
Program/erase controller.
Embedded byte/word program algorithms.
Erase suspend and resume modes.
Read and program another block during erase suspend.
U.

M29W800DT 3v supply flash memory by Numonyx - Datasheet Preview

Datasheet Details

Part number	M29W800DT
Manufacturer	Numonyx
File Size	748.08 KB
Description	3V supply flash memory
Datasheet	M29W800DT Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M29W800DT M29W800DB 8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory Features Supply voltage – VCC = 2.7 V to 3.