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MSM548512L - High-Speed PSRAM

General Description

The MSM548512L is fabricated using OKI’s CMOS silicon gate process technology.

This process, coupled with single-transister memory storage cells, permits maximum circuit density, minimum chip size and high speed.

Key Features

  • a static RAM-like write function that writes the data into the memory cell at the rising edge of WE.

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Full PDF Text Transcription for MSM548512L (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MSM548512L. For precise diagrams, and layout, please refer to the original PDF.

E2L0044-17-Y1 www.DataSheet4U.com ¡ Semiconductor ¡ Semiconductor MSM548512L 524,288-Word ¥ 8-Bit High-Speed PSRAM This version: Jan. 1998 MSM548512L Previous version: De...

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gh-Speed PSRAM This version: Jan. 1998 MSM548512L Previous version: Dec. 1996 DESCRIPTION The MSM548512L is fabricated using OKI’s CMOS silicon gate process technology. This process, coupled with single-transister memory storage cells, permits maximum circuit density, minimum chip size and high speed. MSM548512L has Self-refresh mode in addition to Address-refresh mode and Auto-refresh mode. In the Self-refresh mode the internal refresh timer and address counter refresh the dynamic memory cells automatically. This series allows low power consumption when using standby mode with Self-refresh.

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