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MSM5718B70 - 18-Megabit RDRAM (2M x 9)

Description

The 18-Megabit Rambus™ DRAM (RDRAM™) is an extremely high-speed CMOS DRAM organized as 2M words by 9 bits.

It is capable of bursting up to 256 bytes of data at less than 2 nanoseconds per byte.

Features

  • graphics include random-access mode, write-per-bit and mask-per-bit operations.
  • Control and refresh logic entirely self-contained.
  • On-chip registers for flexible addressing and timing.
  • Available in horizontal surface mount plastic package (SHP32-P-1125-0.65-K) 1 MSM5718B70 ¡ Semiconductor RDRAMs RModule RSocket Rambus Channel Controller Fig. 1 Rambus Subsystem SYSTEM.

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Datasheet preview – MSM5718B70

Datasheet Details

Part number MSM5718B70
Manufacturer OKI Electric
File Size 260.42 KB
Description 18-Megabit RDRAM (2M x 9)
Datasheet download datasheet MSM5718B70 Datasheet
Additional preview pages of the MSM5718B70 datasheet.

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Full PDF Text Transcription

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¡ Semiconductor MSM5718B70 ¡ Semiconductor 18-Megabit RDRAM (2M ¥ 9) MSM5718B70 E2G1033-17-54 DESCRIPTION The 18-Megabit Rambus™ DRAM (RDRAM™) is an extremely high-speed CMOS DRAM organized as 2M words by 9 bits. It is capable of bursting up to 256 bytes of data at less than 2 nanoseconds per byte. The use of Rambus Signaling Logic (RSL) technology makes transfer rates greater than 500 MHz achievable while using conventional system and board design methodologies. Lower effective latency is attained by operating the dual 2KByte sense amplifiers as high speed caches, and by using random access mode to facilitate large block transfers.
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