MGW21N60ED transistor equivalent, insulated gate bipolar transistor.
MAX 0.776 0.799 0.602 0.626 0.185 0.209 0.039 0.055 0.050 REF 0.079 0.094 0.216 BSC 0.087 0.102 0.016 0.031 0.559 0.583 0.217 NOM 0.146 0.169 0.140 0.144 0.197 NOM 0.217.
requiring both a high temperature short circuit capability and a low VCE(on). It also provides fast switching characteri.
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