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  ON Semiconductor Electronic Components Datasheet  

MJ14003 Datasheet

Complementary Silicon Power Transistors

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MJ14001 (PNP),
MJ14002* (NPN),
MJ14003* (PNP)
*Preferred Devices
High−Current Complementary
Silicon Power Transistors
Designed for use in high−power amplifier and switching circuit
applications.
Features
High Current Capability − IC Continuous = 60 Amperes
DC Current Gain − hFE = 15−100 @ IC = 50 Adc
Low Collector−Emitter Saturation Voltage −VCE(sat) = 2.5 Vdc (Max)
@ IC = 50 Adc
Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
MJ14001 VCEO
MJ14002/03
60
Vdc
80
Collector−Base Voltage
MJ14001 VCBO
MJ14002/03
60
Vdc
80
Emitter−Base Voltage
Collector Current − Continuous
Base Current − Continuous
Emitter Current − Continuous
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
VEBO
IC
IB
IE
PD
5.0
Vdc
60
Adc
15
Adc
75
Adc
300
W
1.71
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +200 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
60 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80 VOLTS, 300 WATTS
MARKING
DIAGRAM
MJ1400xG
AYYWW
MEX
TO−204 (TO−3)
CASE 197A
STYLE 1
MJ1400x = Device Code
xx = 1, 2, or 3
G
= Pb−Free Package
A
= Location Code
YY
= Year
WW
= Work Week
MEX
= Country of Orgin
360
330
270
210
150
90
30
0
0
40
80
120
160
200
240
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
ORDERING INFORMATION
Device
MJ14001
MJ14001G
MJ14002
Package
TO−3
TO−3
(Pb−Free)
TO−3
Shipping
100 Units/Tray
100 Units/Tray
100 Units/Tray
MJ14002G
MJ14003
MJ14003G
TO−3
(Pb−Free)
TO−3
TO−3
(Pb−Free)
100 Units/Tray
100 Units/Tray
100 Units/Tray
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
1
December, 2005 − Rev. 6
Publication Order Number:
MJ14001/D


  ON Semiconductor Electronic Components Datasheet  

MJ14003 Datasheet

Complementary Silicon Power Transistors

No Preview Available !

MJ14001 (PNP), MJ14002* (NPN), MJ14003* (PNP)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Case
Symbol
RqJC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Sustaining Voltage (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 200 mAdc, IB = 0)
MJ14001
MJ14002, MJ14003
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCE = 60 Vdc, VBE(off) = 1.5 V)
(VCE = 80 Vdc, VBE(off) = 1.5 V)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCB = 60 Vdc, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCB = 80 Vdc, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 25 Adc, VCE = 3.0 V)
(IC = 50 Adc, VCE = 3.0 V)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 60 Adc, VCE = 3.0 V)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Saturation Voltage (Note 1)
(IC = 25 Adc, IB = 2.5 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 50 Adc, IB = 5.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 60 Adc, IB = 12 Adc)
Base−Emitter Saturation Voltage (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 25 Adc, IB = 2.5 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 50 Adc, IB = 5.0 Adc)
(IC = 60 Adc, IB = 12 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Output Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
MJ14001
MJ14402, MJ14003
MJ14001
MJ14002, MJ14003
MJ14001
MJ14002, MJ14003
Symbol
VCEO(sus)
ICEO
ICEX
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
Cob
Max
0.584
Unit
_C/W
Min
Max
Unit
Vdc
60
80
mA
1.0
1.0
mA
1.0
1.0
mA
1.0
1.0
1.0
mA
30
15
100
5.0
Vdc
1.0
2.5
3.0
Vdc
2.0
3.0
4.0
2000
pF
100
70
5.0 ms 1.0 ms 1.0 ms
50
30
20
dc
10
7.0
5.0
TC = 25°C
3.0
2.0
WIRE BOND LIMIT
THERMAL LIMIT
1.0
SECOND BREAKDOWN LIMIT
0.7
0.5
0.3
0.2
0.1
1.0
2.0 3.0
MJ14001
MJ14002, MJ14003
5.0 7.0 10
20 30 50 70 100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 2. Maximum Rated Forward Biased
Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation: i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 200_C. TJ(pk) may be calculated from the data in
Figure 13. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
http://onsemi.com
2


Part Number MJ14003
Description Complementary Silicon Power Transistors
Maker ON
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MJ14003 Datasheet PDF





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