MJ14003
MJ14003 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- With TO-3 packaging
- Very high DC current gain
- Monolithic darlington transistor with integrated antiparallel collector-emitter diode
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Electronic ignition
- Alternator regulator
- Motor controls
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC IB PD Tj
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current- Continuous Collector Power Dissipation Max.Junction Temperature
-80
-80
-5
-60
-15
℃
Tstg
Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 0.58 ℃/W isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor
INCHANGE Semiconductor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise...
