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1N5819 Datasheet SCHOTTKY BARRIER RECTIFIER

Manufacturer: onsemi

Download the 1N5819 datasheet PDF. This datasheet also includes the 1N5817 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N5817-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS 1N5817, 1N5818, 1N5819 This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode.

Key Features

  • chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low.
  • voltage, high.
  • frequency inverters, free wheeling diodes, and polarity protection diodes. Features.
  • Extremely Low VF.
  • Low Stored Charge, Majority Carrier Conduction.
  • Low Power Loss/High Efficiency.
  • These are Pb.
  • Free Devices.
  • Mechanical Characteristics:.
  • Case: Epoxy, Molded.
  • Weigh.