1N5819 Datasheet | Specifications & PDF Download

Technical Data Data Sheet N1756, Rev. - 1N5817W-1N5819W SCHOTTKY BARRIER DIODE Features: • Metal silicon junction, majority carrier conduction • Guard

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SMD Type Schottky Barrier Rectifier Diodes 1N5817-1N5819 Diodes Features For Surface Mounted Applications Metal Silicon Junction, Majority Carrier C

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AiT Components Inc. www.ait-components.com 1N5817~1N5819 SCHOTTKY DIODES SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS DESCRIPTION The 1N5817~1N5819 are

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1N5817W~1N5819W Rev.C Feb.-2015 / Descriptions ， SOD-123FL 。 Schottky Barrier Rectifiers,SOD-123FL thin package. DATA SHEET / Features ，，，，，，。。 L

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www.vishay.com 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Plastic Rectifier DO-41 (DO-204AL) PRIMARY CHARACTERISTICS IF

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Jingdao Microelectronics SCHOTTKY BARRIER RECTIFIERS FEATURES • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protec

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HL200101 Issued Date : 2000.01.15 Revised Date : 2001.12.06 Page No. : 1/3 H1N5817 thru H1N5819 1.0

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UNISONIC TECHNOLOGIES CO., LTD 1N5819 SCHOTTKY BARRIER DIODE FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage

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1N5817S-1N5819S Schottky Barrier Rectifiers Features Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low

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tSENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 193, REV. A HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE 1N5819-1 1N5819UR-1 JAN JANTX JANTXV

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® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 25A Peak  Low Power L

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SMD Type Schottky Diodes 1N5817W ~ 1N5819W TransDisiotodress Ƶ Features ƽ Low power loss, high efficiency ƽ High current capability ƽ Low forward v

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1N5819U Datasheet Aerospace 45 V, 1 A Schottky diode in LCC-2B package A K K A Leadless chip carrier 2 (LCC-2B) Product status 1N5819U Product s

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SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER 1N5819WLC REVERSE VOLTAGE – 40 Volts FORWARD CURRENT – 1.0 Ampere FEATURES • Low Forward Voltage Drop • Hig

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SCHOTTKY RECTIFIER DIODE 1N5819D2 Variant Options D2A to D2H • High Surge Capability • Extremely Fast Switching • Low Forward Voltage • Hermetic Cera

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1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features ■ Very small conduction losses ■ Negligible switching losses ■ Extremely fast swit

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Features * Reverse voltage - 20 to 40 V * Forward current - 1 A 1N5817W THRU 1N5819W Surface Mount Schottky Barrier Rectifiers A C B DE G F SOD-12

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DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky barrier diodes Product specification Supersedes data of April 1992

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5817/D Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a lar

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