1N5817, 1N5818, 1N5819 Low drop power Schottky rec.
Diodes Incorporated
1N5819M - 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
1N5817M / 1N5818M / 1N5819M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER Features · · · · · High Current Capability Low Forward Voltage Drop Guard Ri.
Taiwan Semiconductor
1N5819 - Schottky Barrier Rectifiers
1N5817 – 1N5819 Taiwan Semiconductor 1A, 20V - 40V Schottky Barrier Rectifier FEATURES ● AEC-Q101 qualified available ● Low forward voltage drop ● G.
ON Semiconductor
1N5819 - SCHOTTKY BARRIER RECTIFIER
Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS 1N5817, 1N5818, 1N5819 This series employs the Schottky Barrier princ.
JGD
1N5819W - Surface Mount Schottky Barrier Rectifiers
Features * Reverse voltage - 20 to 40 V * Forward current - 1 A 1N5817W THRU 1N5819W Surface Mount Schottky Barrier Rectifiers A C B DE G F SOD-12.
Kexin
1N5819W - Schottky Barrier Diodes
SMD Type Schottky Diodes 1N5817W ~ 1N5819W TransDisiotodress Ƶ Features ƽ Low power loss, high efficiency ƽ High current capability ƽ Low forward v.
SEMTECH
1N5819W - Surface Mount Schottky Barrier Rectifier
1N5817W THRU 1N5819W Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 40 V Forward Current - 1 A PINNING PIN 1 2 1 DESCRIP.
Sangdest Microelectronics
1N5819W - SCHOTTKY BARRIER DIODE
Technical Data Data Sheet N1756, Rev. - 1N5817W-1N5819W SCHOTTKY BARRIER DIODE Features: • Metal silicon junction, majority carrier conduction • Guard.
Rectron
1N5819W - SCHOTTKY BARRIER RECTIFIER
SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere Features • Metal silicon junction, majority carrier conduction • Guarding f.
BLUE ROCKET ELECTRONICS
1N5819W - Schottky Barrier Rectifiers
1N5817W~1N5819W Rev.C Feb.-2015 / Descriptions ， SOD-123FL 。 Schottky Barrier Rectifiers,SOD-123FL thin package. DATA SHEET / Features ，，，，，，。。 L.
NXP
1N5819 - Schottky barrier diodes
DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky barrier diodes Product specification Supersedes data of April 1992 .
MotorolaInc
1N5819 - SCHOTTKY BARRIER RECTIFIERS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5817/D Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a lar.
Vishay Siliconix
1N5819 - Schottky Barrier Rectifiers
www.vishay.com 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Plastic Rectifier DO-41 (DO-204AL) PRIMARY CHARACTERISTICS IF.
PAN JIT
1N5819 - SCHOTTKY BARRIER RECTIFIERS
1N5817~1N5819 SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 40 Volt CURRENT 1 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammabilit.
WON-TOP
1N5819 - 1.0A SCHOTTKY BARRIER DIODE
® WON-TOP ELECTRONICS Features Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 25A Peak Low Power L.
AiT Components
1N5819 - SCHOTTKY DIODES
AiT Components Inc. www.ait-components.com 1N5817~1N5819 SCHOTTKY DIODES SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS DESCRIPTION The 1N5817~1N5819 are.
Kexin
1N5819 - Schottky Barrier Rectifier Diodes
SMD Type Schottky Barrier Rectifier Diodes 1N5817-1N5819 Diodes Features For Surface Mounted Applications Metal Silicon Junction, Majority Carrier C.
UTC
1N5819 - SCHOTTKY BARRIER DIODE
UNISONIC TECHNOLOGIES CO., LTD 1N5819 SCHOTTKY BARRIER DIODE FEATURES * Schottky barrier chip * Low power loss, high efficiency. * Low forward voltage.
Sensitron
1N5819-1 - SCHOTTKY BARRIER DIODE
tSENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 193, REV. A HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE 1N5819-1 1N5819UR-1 JAN JANTX JANTXV.
Diodes
1N5819 - 1.0A SCHOTTKY BARRIER RECTIFIER
Pb 1N5817 - 1N5819 1.0A SCHOTTKY BARRIER RECTIFIER Features Guard Ring Die Construction for Transient Protection Low-Power Loss, High Efficienc.
Hi-Sincerity Mocroelectronics
H1N5819 - 1.0AMP.SCHOTTKY BARRIER RECTIFIERS
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HL200101 Issued Date : 2000.01.15 Revised Date : 2001.12.06 Page No. : 1/3 H1N5817 thru H1N5819 1.0 .