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2N3773 - NPN Power Transistors

Key Features

  • High Safe Operating Area (100% Tested) 150 W @ 100 V.
  • Completely Characterized for Linear Operation.
  • High DC Current Gain and Low Saturation Voltage hFE = 15 (Min) @ 8.0 A, 4.0 V VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A.
  • For Low Distortion Complementary Designs.
  • This is a Pb.
  • Free Device.

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Datasheet Details

Part number 2N3773
Manufacturer onsemi
File Size 195.43 KB
Description NPN Power Transistors
Datasheet download datasheet 2N3773 Datasheet

Full PDF Text Transcription for 2N3773 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2N3773. For precise diagrams, and layout, please refer to the original PDF.

NPN Power Transistors 2N3773 The 2N3773 is a PowerBase power transistor designed for high power audio, disk head positioners and other linear applications. This device ca...

View more extracted text
o, disk head positioners and other linear applications. This device can also be used in power switching circuits such as relay or solenoid drivers, DC−DC converters or inverters. Features  High Safe Operating Area (100% Tested) 150 W @ 100 V  Completely Characterized for Linear Operation  High DC Current Gain and Low Saturation Voltage hFE = 15 (Min) @ 8.0 A, 4.0 V VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.

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