2N3771 Datasheet - ON Semiconductor

2N3771 High Power NPN Silicon Power Transistors

2N3771 Features

* Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc

* 2N3771 = 2.5 Adc @ VCE = 60 Vdc

* 2N3772

* These Devices are Pb

* Free and are RoHS Compliant MAXIMUM RATINGS (Note 1) Rating Collector

* Emitter Voltage Collector

Datasheet Details

2N3771

239.73 KB

High power npn silicon power transistors.

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