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2N3771 - High Power NPN Silicon Power Transistors

2N3771 Description

2N3771, 2N3772 High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switc.

2N3771 Features

* Forward Biased Second Breakdown Current Capability IS/b = 3.75 Adc @ VCE = 40 Vdc
* 2N3771 = 2.5 Adc @ VCE = 60 Vdc
* 2N3772
* These Devices are Pb
* Free and are RoHS Compliant MAXIMUM RATINGS (Note 1) Rating Collector
* Emitter Voltage Collector

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