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2N3055G, 2N3055 Complementary Silicon Power Transistors

2N3055G Description

2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general .

2N3055G Features

* DC Current Gain
* hFE = 20
* 70 @ IC = 4 Adc
* Collector
* Emitter Saturation Voltage
* VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
* Excellent Safe Operating Area
* Pb
* Free Packages are Available
* MAXIMUM RATINGS Rating Symbol

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: 2N3055G, 2N3055. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
2N3055G, 2N3055
Manufacturer
ON Semiconductor ↗
File Size
190.96 KB
Datasheet
2N3055_ONSemiconductor.pdf
Description
Complementary Silicon Power Transistors
Note
This datasheet PDF includes multiple part numbers: 2N3055G, 2N3055.
Please refer to the document for exact specifications by model.

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Complementary Silicon Power Transistors ON Semiconductor
ON Semiconductor 2N3055G-like datasheet