2N3055B NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Excellent Safe Operating Area. DC Current Gain-hFE=70-140 @IC = 4A. Collector-Emitter Saturation Voltage- : VCE(sat)= 1.

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Datasheet Specifications

Part number: 2N3055B
Manufacturer: INCHANGE
File Size: 223.48 KB
Datasheet: 2N3055B-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base C

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2N3055B NPN Transistor INCHANGE

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