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2N3055B NPN Transistor

2N3055B Description

isc Silicon NPN Power Transistor .
Excellent Safe Operating Area. DC Current Gain-hFE=70-140 @IC = 4A. Collector-Emitter Saturation Voltage- : VCE(sat)= 1.

2N3055B Applications

* Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base C

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Datasheet Details

Part number
2N3055B
Manufacturer
INCHANGE
File Size
223.48 KB
Datasheet
2N3055B-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2N3055B-like datasheet