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2N3055B

NPN Transistor

2N3055B General Description


*Excellent Safe Operating Area
*DC Current Gain-hFE=70-140 @IC = 4A
*Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for general-purpose switching and.

2N3055B Datasheet (223.48 KB)

Preview of 2N3055B PDF

Datasheet Details

Part number:

2N3055B

Manufacturer:

INCHANGE

File Size:

223.48 KB

Description:

Npn transistor.

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2N3055B NPN Transistor INCHANGE

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