2N3019
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Low power transistor.
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2N3010 - NPN silicon low-power transistor
(Motorola)
2N3010 (SILICON)
CASE 22
(TO-18)
NPN silicon low-power transistor primarily designed for high-speed, saturated switching applications.
Collector co.
2N3011 - SILICON NPN TRANSISTOR
(Central Semiconductor)
2N3011
SILICON NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN tr.
2N3011 - Bipolar NPN Device
(Seme LAB)
2N3011
Dimensions in mm (inches).
5.84 (0.230) 5.31 (0.209)
4.95 (0.195) 4.52 (0.178)
Bipolar NPN Device in a Hermetically sealed TO18
Metal Package.
2N3011 - SWITCHING TRANSISTOR
(Motorola)
MAXIMUM RATINGS
Rating
Collector-Emitter Voltaged)
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous.
2N3012 - Bipolar PNP Device
(Seme LAB)
Dimensions in mm (inches).
m o .c U 4 t e e h S a at .D w w w
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
2N3012
Bipolar PNP Device in a He.
2N3012 - Small Signal Transistors
(Central Semiconductor)
Small Signal Transistors TO-18 Case (Continued)
TYPE NO.
DESCRIPTION
BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (µA) (V)
MIN MIN MIN MAX *ICES **ICEV.
2N3012 - SWITCHING TRANSISTOR
(Motorola)
2N3012
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
SWITCHING TRANSISTOR
PNP SILICON
Refer to 2N869A for graphs.
MAXIMUM RATINGS
Rating
Collector-Emitter Vol.
2N3012CSM - Bipolar PNP Device
(Seme LAB)
Dimensions in mm (inches).
0.51 ± 0.10 (0.02 ± 0.004)
2.54 ± 0.13 (0.10 ± 0.005)
m o .c U 4 t e e h S a at .D w w w
0.31 rad. (0.012)
2N3012CSM
3
.
2N3013 - NPN SILICON HIGH SPEED SWITCHING TRANSISTORS
(Central Semiconductor Corp)
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
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2N3013 - NPN SIlicon Small-Signal Transistor
(Motorola)
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