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2N3019S, 2N3700 Datasheet - Microsemi

2N3019S LOW POWER NPN SILICON TRANSISTOR

TECHNICAL DATA LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Devices 2N3019 2N3019S 2N3057A 2N3700 2N3700S Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C(1) 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB @ TC = +250C(2) 2N3019; 2N3019S 2N3057A 2N3700 2N3700UB Operating & Storage Jct Temp Range Symbol VCEO VCBO VEBO IC PT TJ, Tstg Value 80.

2N3700_MicrosemiCorporation.pdf

This datasheet PDF includes multiple part numbers: 2N3019S, 2N3700. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

2N3019S, 2N3700

Manufacturer:

Microsemi ↗

File Size:

59.08 KB

Description:

Low power npn silicon transistor.

Note:

This datasheet PDF includes multiple part numbers: 2N3019S, 2N3700.
Please refer to the document for exact specifications by model.

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2N3019S 2N3700 LOW POWER NPN SILICON TRANSISTOR Microsemi

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