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2N3421S, 2N3814S Datasheet - Microsemi

2N3421S NPN MEDUIM POWER SILICON TRANSISTOR

TECHNICAL DATA NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/393 Devices 2N3418 2N3814S 2N3419 2N3419S 2N3420 2N3420S 2N3421 2N3421S Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current tP ≤ 1.0 ms, duty cycle ≤ 50% Total Power Dissipation @ TA = +250C(1) @ TC = +1000C(2) Operating & Storage Temperature Range 1) Derate linearly 5.72 mW/0C for TA > 250C 2) Derate linearly 150 mW/0.

2N3814S-Microsemi.pdf

This datasheet PDF includes multiple part numbers: 2N3421S, 2N3814S. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

2N3421S, 2N3814S

Manufacturer:

Microsemi ↗

File Size:

56.23 KB

Description:

Npn meduim power silicon transistor.

Note:

This datasheet PDF includes multiple part numbers: 2N3421S, 2N3814S.
Please refer to the document for exact specifications by model.

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2N3421S 2N3814S NPN MEDUIM POWER SILICON TRANSISTOR Microsemi

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