2N3055 - Complementary Silicon Power Transistors

Datasheet Summary

Features

DC Current Gain.
hFE = 20.
70 @ IC = 4 Adc.
Collector.
Emitter Saturation Voltage.
VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc.
Excellent Safe Operating Area.
Pb.
Free Packages are Available.

ON Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	2N3055
Manufacturer	ON Semiconductor
File Size	190.96 KB
Description	Complementary Silicon Power Transistors
Datasheet	2N3055 Datasheet
Additional preview pages of the 2N3055 datasheet.

📁 Similar Datasheet

2N3055 - COMPLEMENTARY SILICON POWER TRANSISTORS (STMicroelectronics)
2N3055 - NPN POWER SILICON TRANSISTOR (Microsemi Corporation)
2N3055 - COMPLEMENTARY SILICON POWER TRANSISTORS (CENTRAL SEMICONDUCTOR)
2N3055 - NPN Power Silicon Transistor (VPT)
2N3055 - Silicon NPN Power Transistors (SavantIC)
2N3055 - NPN Power Transistor (TAITRON)
2N3055 - Silicon NPN Power Transistor (NTE)
2N3055 - NPN Power Silicon Transistor (Aeroflex)
2N3055 - Complementary Power Transistors (Multicomp)
2N3055 - Silicon NPN Transistor (Toshiba)

Other Datasheets by ON Semiconductor

2N3055A - Complementary Silicon High-Power Transistor
2N3055AG - Complementary Silicon High-Power Transistors
2N3055G - Complementary Silicon Power Transistors
2N3019 - Low Power Transistor
2N3019S - Low Power Transistor
2N3439 - Low Power Transistor
2N3440 - Low Power Transistor
2N3442 - High-Power Industrial Transistors

Full PDF Text Transcription

Click to expand full text

Complementary Silicon Power Transistors 2N3055(NPN), MJ2955(PNP) Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features  DC Current Gain − hFE = 20 −70 @ IC = 4 Adc  Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc  Excellent Safe Operating Area  Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Base Current Total Power Dissipation @ TC = 25C Derate Above 25C VCEO VCER VCB VEB IC IB PD 60 70 100 7 15 7 115 0.

Published: Mar 31, 2007 |