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2N3055 - Complementary Silicon Power Transistors

2N3055 Description

Complementary Silicon Power Transistors 2N3055(NPN), MJ2955(PNP) Complementary silicon power transistors are designed for general *purpose swi.

2N3055 Features

* DC Current Gain
* hFE = 20
* 70 @ IC = 4 Adc
* Collector
* Emitter Saturation Voltage
* VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
* Excellent Safe Operating Area
* Pb
* Free Packages are Available
* MAXIMUM RATINGS Rating Symbol Value Unit Co

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