2N5088, 2N5089
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
Vdc
2N5088
30 −
2N5089
25 −
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
Vdc
2N5088
35 −
2N5089
30 −
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0)
Emitter Cutoff Current
(VEB(off) = 3.0 Vdc, IC = 0)
(VEB(off) = 4.5 Vdc, IC = 0)
ON CHARACTERISTICS
2N5088
2N5089
ICBO
IEBO
nAdc
− 50
− 50
nAdc
− 50
− 100
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
2N5088
2N5089
hFE
300 900
400 1200
−
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
2N5088
2N5089
350 −
450 −
(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Base −Emitter On Voltage
(IC = 10 mAdc, VCE = 5.0 Vdc) (Note 2)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz)
Collector−Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Emitter−Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2N5088
2N5089
300 −
400 −
VCE(sat) − 0.5
VBE(on)
− 0.8
Vdc
Vdc
2N5088
2N5089
2N5088
2N5089
fT
Ccb
Ceb
hfe
NF
50 −
− 4.0
− 10
350 1400
450 1800
− 3.0
− 2.0
MHz
pF
pF
−
dB
RS in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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