2N5089
Description
2N5088 2N5089 Unit VCEO VCBO VEBO IC TJ ,TSTG Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Operation and Storage Junction Temperature Range 30 25 35 30 4.5 100 -55 to +150 V V V mA °C These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. These ratings are based on a maximum junction temperature of 150 degrees C. 2.
Key Features
- NPN silicon epitaxial transistor for switching and amplifier applications
- This device is designed for low noise, high gain, general purpose applications at collector currents from 1µA to 50mA
- RoHS compliance Mechanical Data Case: Terminals: Weight: TO-92, Plastic Package Solderable per MIL-STD-202G, Method 208
- 18 gram TO-92
