
	ON Semiconductor Electronic Components Datasheet

2N5301 Datasheet

POWER TRANSISTORS

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

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by 2N5301/D

High-Power NPN Silicon

Transistors

. . . for use in power amplifier and switching circuits applications.

• High Collector–Emitter Sustaining Voltage —

VCEO(sus) = 80 Vdc (Min) @ IC = 200 mAdc (2N5303)

• Low Collector–Emitter Saturation Voltage —

VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc (2N5301, 2N5302)

VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc (2N5303)

• Excellent Safe Operating Area —

200 Watt dc Power Rating to 30 Vdc (2N5303)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ• Complements to PNP 2N4398, 2N4399 and 2N5745

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C

Derate above 25_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range

Symbol 2N5301 2N5302 2N5303

VCEO

VCB

IC 30 30 20

IB 7.5

PD 200

1.14

TJ, Tstg

– 65 to + 200

Unit

Vdc

Adc

Watts

W/_C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Case to Ambient

Symbol

θJC

θCA

Max

0.875

Unit

_C/W

* Indicates JEDEC Registered Data.

TA TC

8.0 200

2N5301

2N5302

2N5303

20 AND 30 AMPERE

POWER TRANSISTORS

NPN SILICON

40 – 60 – 80 VOLTS

200 WATTS

CASE 1–07

TO–204AA

(TO–3)

6.0 150

4.0 100

2.0 50

0 20 40 60 80 100 120 140 160 180 200

TEMPERATURE (°C)

Figure 1. Power Temperature Derating Curve

©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data


	ON Semiconductor Electronic Components Datasheet

2N5301 Datasheet

POWER TRANSISTORS

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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ2N5301 2N5302 2N5303

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Sustaining Voltage (Note 1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 200 mAdc, IB = 0)

2N5301

2N5302

2N5303

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 40 Vdc, IB = 0)

(VCE = 60 Vdc, IB = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 80 Vdc, IB = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 40 Vdc, VEB(off) = 1.5 Vdc)

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 40 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)

(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current

(VCB = 40 Vdc, IE = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 80 Vdc, IE = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS

DC Current Gain (Note 1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*(IC = 1.0 Adc, VCE = 2.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*(IC = 10 Adc, VCE = 2.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*(IC = 15 Adc, VCE = 2.0 Vdc)

*(IC = 20 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*(IC = 30 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Collector–Emitter Saturation Voltage (Note 1)

(IC = 10 Adc, IB = 1.0 Adc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, IB = 1.0 Adc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 15 Adc, IB = 1.5 Adc)

(IC = 20 Adc, IB = 2.0 Adc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 20 Adc, IB = 4.0 Adc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 30 Adc, IB = 6.0 Adc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Base Emitter Saturation Voltage (Note 1)

(IC = 10 Adc, IB = 1.0 Adc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 15 Adc, IB = 1.5 Adc)

(IC = 20 Adc, IB = 2.0 Adc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 20 Adc, IB = 4.0 Adc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Base–Emitter On Voltage (Note 1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, VCE = 2.0 Vdc)

(IC = 15 Adc, VCE = 2.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 20 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 30 Adc, VCE = 4.0 Vdc)

2N5301

2N5302

2N5303

2N5301

2N5302

2N5303

2N5301

2N5302

2N5303

2N5301

2N5302

2N5303

ALL TYPES

2N5303

2N5301, 2N5302

2N5303

2N5301, 2N5302

2N5303

2N5301, 2N5302

2N5303

2N5301, 2N5302

ALL TYPES

2N5301, 2N5302

2N5303

2N5301, 2N5302

2N5303

2N5301, 2N5302

2N5303

2N5301, 2N5302

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent–Gain — Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)

Small–Signal Current Gain (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 kHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRise Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStorage Time

(VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎFall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*Indicates JEDEC Registered Data.

v vNote 1: Pulse Width 300 µs, Duty Cycle 2.0%.

Symbol

VCEO(sus)

ICEO

ICEX

ICBO

IEBO

hFE

VCE(sat)

VBE(sat)

VBE(on)

hfe

Min

—

5.0

—

2.0

—

Max Unit

Vdc

—

mAdc

5.0

mAdc

1.0

mAdc

1.0

5.0 mAdc

—

Vdc

0.75

1.0

1.5

2.0

3.0

Vdc

1.7

1.8

2.0

2.5

Vdc

1.5

1.7

3.0

— MHz

——

1.0 µs

2.0 µs

1.0 µs

2 Motorola Bipolar Power Transistor Device Data

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