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2N5401
Amplifier Transistors
PNP Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
150 Vdc 160 Vdc 5.0 Vdc 600 mAdc 625 mW 5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 W
Derate above 25°C
12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
2N5401 Datasheet
