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2N5458G - N-Channel MOSFET

This page provides the datasheet information for the 2N5458G, a member of the 2N5457 N-Channel MOSFET family.

Features

  • N.
  • Channel for Higher Gain.
  • Drain and Source Interchangeable.
  • High AC Input Impedance.
  • High DC Input Resistance.
  • Low Transfer and Input Capacitance.
  • Low Cross.
  • Modulation and Intermodulation Distortion.
  • Plastic Encapsulated Package.
  • Pb.
  • Free Packages are Available.

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Datasheet preview – 2N5458G

Datasheet Details

Part number 2N5458G
Manufacturer ON Semiconductor
File Size 130.61 KB
Description N-Channel MOSFET
Datasheet download datasheet 2N5458G Datasheet
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Full PDF Text Transcription

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2N5457, 2N5458 JFETs - General Purpose N−Channel − Depletion N−Channel Junction Field Effect Transistors, depletion mode (Type A) designed for audio and switching applications. Features • N−Channel for Higher Gain • Drain and Source Interchangeable • High AC Input Impedance • High DC Input Resistance • Low Transfer and Input Capacitance • Low Cross−Modulation and Intermodulation Distortion • Plastic Encapsulated Package • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage Drain −Gate Voltage Reverse Gate −Source Voltage Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C VDS VDG VGSR IG PD 25 Vdc 25 Vdc −25 Vdc 10 mAdc 310 mW 2.
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