
	ON Semiconductor Electronic Components Datasheet

2N5884 Datasheet

(2N5883 - 2N5886) Complementary Silicon High-Power Transistors

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2N5883, 2N5884 (PNP)

2N5885, 2N5886 (NPN)

2N5884 and 2N5886 are Preferred Devices

Complementary Silicon

High−Power Transistors

Complementary silicon high−power transistors are designed for

general−purpose power amplifier and switching applications.

Features

• Low Collector−Emitter Saturation Voltage −

VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc

• Low Leakage Current

ICEX = 1.0 mAdc (max) at Rated Voltage

• Excellent DC Current Gain −

hFE = 20 (min) at IC = 10 Adc

• High Current Gain Bandwidth Product −

ft = 4.0 MHz (min) at IC = 1.0 Adc

• Pb−Free Packages are Available*

MAXIMUM RATINGS (Note 1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating

Symbol

Value

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ2N5883, 2N5885

2N5884, 2N5886

VCEO

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Base Voltage

2N5883, 2N5885

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ2N5884, 2N5886

VCB

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter−Base Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current −

Continuous

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak

VEB 5.0 Vdc

IC Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current

IB 7.5 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25°C

200 W

Derate above 25°C

1.15 W/°C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction

Temperature Range

TJ, Tstg – 65 to + 200 °C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic

Symbol Max Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction−to−Case

qJC

0.875

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC registered data. Units and conditions differ on some

parameters and re−registration reflecting these changes has been requested.

All above values most or exceed present JEDEC registered data.

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25 AMPERE COMPLEMENTARY

SILICON POWER TRANSISTORS

60 − 80 VOLTS, 200 WATTS

TO−204AA (TO−3)

CASE 1−07

STYLE 1

MARKING DIAGRAM

2N588xG

AYYWW

MEX

2N588x

MEX

= Device Code

x = 3, 4, 5, or 6

= Pb−Free Package

= Assembly Location

= Year

= Work Week

= Country of Origin

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

March, 2006 − Rev. 11

Publication Order Number:

2N5883/D


	ON Semiconductor Electronic Components Datasheet

2N5884 Datasheet

(2N5883 - 2N5886) Complementary Silicon High-Power Transistors

No Preview Available !

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (Note 2) (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Sustaining Voltage (Note 3)

(IC = 200 mAdc, IB = 0)

2N5883, 2N5885

2N5884, 2N5886

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 30 Vdc, IB=0)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 40 Vdc, IB=0)

2N5883, 2N5885

2N5984, 2N5886

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)

2N5883, 2N5885

2N5884, 2N5886

2N5883, 2N5885

2N5884, 2N5886

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 60 Vdc, IE=0)

(VCB = 80 Vdc, IE = 0)

2N5883, 2N5885

2N5884, 2N5886

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain (Note 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 3.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, VCE = 4.0 Vdc)

(IC = 25 Adc, VCE = 4.0 Vdc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector−Emitter Saturation Voltage (Note 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 15 Adc, IB = 1.5 Adc)

(IC = 25 Adc, IB = 6.25 Adc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase−Emitter Saturation Voltage (Note 3) (IC = 25 Adc, IB = 6.25 Adc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase−Emitter On Voltage (Note 3) (IC = 10 Adc, VCE = 4.0 Vdc)

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCurrent−Gain − Bandwidth Product (Note 4) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)

Output Capacitance

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

2N5883, 2N5884

2N5885, 2N5886

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSmall−Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 kHz)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRise Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎStorage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎFall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ2. Indicates JEDEC Registered Data.

(VCC = 30 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)

Symbol

VCEO(sus)

ICEO

ICEX

ICBO

IEBO

hFE

VCE(sat)

VBE(sat)

VBE(on)

Cob

hfe

Min

−

4.0

−

4.0

−

Max Unit

− Vdc

−

2.0 mAdc

2.0

1.0 mAdc

1.0

1.0 mAdc

1.0

1.0 mAdc

−−

100

1.0 Vdc

4.0

2.5 Vdc

1.5 Vdc

−

1000

500

−

MHz

−

0.7 ms

1.0 ms

0.8 ms

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

4. fT = |hfe| • ftest.

200

175

150

125

100

0 25 50 75 100 125 150 175 200

TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

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2N5884 Datasheet

(2N5883 - 2N5886) Complementary Silicon High-Power Transistors

2N5884 Datasheet

(2N5883 - 2N5886) Complementary Silicon High-Power Transistors

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