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2N5884 - Complementary Silicon High-Power Transistors

This page provides the datasheet information for the 2N5884, a member of the 2N5883 Complementary Silicon High-Power Transistors family.

Product Overview

ON Semiconductor

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2N5884 Complementary Silicon High-Power Transistors by ON Semiconductor - Datasheet Preview — Datasheet preview – 2N5884

Datasheet Details

Part number	2N5884
Manufacturer	ON Semiconductor
File Size	116.11 KB
Description	Complementary Silicon High-Power Transistors
Datasheet	2N5884 Datasheet
Additional preview pages of the 2N5884 datasheet.

2N5884 Product details

Features

http://onsemi. com.
Low Collector.
Emitter Saturation Voltage.
VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage Excellent DC Current Gain.
hFE = 20 (min) at IC = 10 Adc High Current Gain Bandwidth Product.
ft = 4.0 MHz (min) at IC = 1.0 Adc Pb.
Free Packages are Available.
25 AMPERE.

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Other Datasheets by ON Semiconductor

2N5882 - Silicon NPN High-Power Transistor
2N5883 - Complementary Silicon High-Power Transistors
2N5885 - Complementary Silicon High-Power Transistors
2N5886 - Complementary Silicon High-Power Transistors
2N5038 - NPN Silicon Transistors
2N5039 - NPN SILICON POWER TRANSISTORS
2N5060 - Sensitive Gate Silicon Controlled Rectifiers
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Published: Apr 2, 2007 |