Datasheet4U Logo Datasheet4U.com

2N5885 - Complementary Silicon High-Power Transistors

This page provides the datasheet information for the 2N5885, a member of the 2N5883 Complementary Silicon High-Power Transistors family.

Features

  • http://onsemi. com.
  • Low Collector.
  • Emitter Saturation Voltage.
  • VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage Excellent DC Current Gain.
  • hFE = 20 (min) at IC = 10 Adc High Current Gain Bandwidth Product.
  • ft = 4.0 MHz (min) at IC = 1.0 Adc Pb.
  • Free Packages are Available.
  • 25 AMPERE.

📥 Download Datasheet

Datasheet preview – 2N5885

Datasheet Details

Part number 2N5885
Manufacturer ON Semiconductor
File Size 116.11 KB
Description Complementary Silicon High-Power Transistors
Datasheet download datasheet 2N5885 Datasheet
Additional preview pages of the 2N5885 datasheet.

📁 Similar Datasheet

  • 2N5885 - NPN SILICON POWER TRANSISTORS (Digitron Semiconductors)
  • 2N5885 - NPN Transistor (INCHANGE)
  • 2N5885 - COMPLEMENTARY SILICON POWER TRANSISTORS (Central Semiconductor)
  • 2N5885 - COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS (Motorola)
  • 2N5885 - NPN MULTI - EPITAXIAL POWER TRANSISTOR (Seme LAB)
  • 2N5880 - Complementary Power Transistor (Multicomp)
  • 2N5880 - (2N5879 / 2N5880) Silicon PNP Power Transistors (Savantic)
  • 2N5881 - POWER TRANSISTORS (Mospec Semiconductor)
  • 2N5881 - Silicon NPN Power Transistors (SavantIC)
  • 2N5881 - Bipolar NPN Device (Seme LAB)
Other Datasheets by ON Semiconductor
  • 2N5882 - Silicon NPN High-Power Transistor
  • 2N5883 - Complementary Silicon High-Power Transistors
  • 2N5884 - Complementary Silicon High-Power Transistors
  • 2N5886 - Complementary Silicon High-Power Transistors
  • 2N5038 - NPN Silicon Transistors
  • 2N5039 - NPN SILICON POWER TRANSISTORS
  • 2N5060 - Sensitive Gate Silicon Controlled Rectifiers
  • 2N5061 - Sensitive Gate Silicon Controlled Rectifiers

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features http://onsemi.com • Low Collector−Emitter Saturation Voltage − • • • • VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current ICEX = 1.0 mAdc (max) at Rated Voltage Excellent DC Current Gain − hFE = 20 (min) at IC = 10 Adc High Current Gain Bandwidth Product − ft = 4.0 MHz (min) at IC = 1.
Published: |