2N6028 Key Features
- Programmable
- RBB, h, IV and IP
- Low On-State Voltage
- 1.5 V Maximum @ IF = 50 mA
- Low Gate to Anode Leakage Current
- 10 nA Maximum
- High Peak Output Voltage
- 11 V Typical
- Low Offset Voltage
- 0.35 V Typical (RG = 10 kW)
- Part: 2N6028
- Manufacturer: onsemi (official site)
- Size: 73.57 KB
Other 2N6028 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
NTE Electronics |
2N6028 | Programmable Unijunction Transistor |
Central Semiconductor |
2N6028 | SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS |
2N6028 Description
2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circuits. These devices may also be used in special thyristor applications due to the...