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2N6028 - SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS

Download the 2N6028 datasheet PDF. This datasheet also covers the 2N6027 variant, as both devices belong to the same silicon programmable unijunction transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characteristics such as Valley Current (IV), Peak Current (IP), and Intrinsic Standoff Ratio ().

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Note: The manufacturer provides a single datasheet file (2N6027-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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2N6028 Programmable Unijunction Transistor ON Semiconductor
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2N6027 Programmable Unijunction Transistor ON Semiconductor
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2N6029 COMPLEMENTARY SILICON POWER TRANSISTORS Central Semiconductor Corp

Other Datasheets by Central Semiconductor

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N6027 2N6028 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characteristics such as Valley Current (IV), Peak Current (IP), and Intrinsic Standoff Ratio (). TO-92 CASE MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) Gate-Cathode Forward Voltage Gate-Cathode Reverse Voltage Gate-Anode Reverse Voltage Anode-Cathode Voltage Peak Non-Repetitive Forward Current (t=10μs) Peak Repetitive Forward Current (t=20μs, D.C.=1.0%) Peak Repetitive Forward Current (t=100μs, D.C.=1.