2N6029 Overview
The CENTRAL SEMICONDUCTOR 2N5629, 2N6029 series devices are plementary silicon power transistors, manufactured by the epitaxial base process, designed for high voltage and high power amplifier applications. FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=Rated VCBO ICEX VCE=Rated VCEO, VEB=1.5V ICEX VCE=Rated VCEO, VEB=1.5V, TC=150°C ICEO VCE=½Rated...
