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2N6040 - COMPLEMENTARY SILICON POWER TRANSISTORS

Key Features

  • High DC Current Gain.
  • hFE = 2500 (Typ) @ IC = 4.0 Adc.
  • Collector.
  • Emitter Sustaining Voltage.
  • @ 100 mAdc.
  • VCEO(sus) = 60 Vdc (Min).
  • 2N6040, 2N6043 = 100 Vdc (Min).
  • 2N6042, 2N6045.
  • Low Collector.
  • Emitter Saturation Voltage.
  • VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc.
  • 2N6043,44 = 2.0 Vdc (Max) @ IC = 3.0 Adc.
  • 2N6042, 2N6045.
  • Monolithic Construction with Built.
  • In Base.

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Datasheet Details

Part number 2N6040
Manufacturer onsemi
File Size 132.92 KB
Description COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet download datasheet 2N6040 Datasheet

Full PDF Text Transcription for 2N6040 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2N6040. For precise diagrams, and layout, please refer to the original PDF.

PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 Plastic Medium-Power Complementary Silicon Transistors Plastic medium−power complementary silicon transistors are designed for ...

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astic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc − VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043 = 100 Vdc (Min) − 2N6042, 2N6045 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44 = 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045 • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Epoxy Meets UL 94 V−0 @ 0.

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