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  ON Semiconductor Electronic Components Datasheet  

2N6387 Datasheet

Plastic Medium-Power Silicon Transistors

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2N6387, 2N6388
Plastic Medium-Power
Silicon Transistors
These devices are designed for general−purpose amplifier and
low−speed switching applications.
Features
High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector−Emitter Sustaining Voltage − @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) − 2N6387
= 80 Vdc (Min) − 2N6388
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC
= 5.0 Adc − 2N6387, 2N6388
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
TO−220AB Compact Package
These Devices are Pb−Free and are RoHS Compliant*
www.onsemi.com
DARLINGTON NPN SILICON
POWER TRANSISTORS
8 AND 10 AMPERES
65 WATTS, 60 − 80 VOLTS
4
MAXIMUM RATINGS (Note 1)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
2N6387 VCEO 60 Vdc
2N6388
80
Collector−Base Voltage
2N6387 VCB
2N6388
60 Vdc
80
Emitter−Base Voltage
Collector Current − Continuous
− Peak
VEB 5.0 Vdc
IC 10 Adc
15
Base Current
Total Power Dissipation @ TC = 25_C
Derate above 25_C
IB 250 mAdc
PD 65 W
0.52 W/°C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
PD 2.0 W
0.016 W/°C
Operating and Storage Junction,
Temperature Range
TJ, Tstg −65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC Registered Data.
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
RqJC
RqJA
1.92 _C/W
62.5 _C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
1
2
3
TO−220
CASE 221A
STYLE 1
MARKING DIAGRAM
2N638xG
AYWW
2N638x = Device Code
x = 7 or 8
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
2N6387G
TO−220
(Pb−Free)
50 Units / Rail
2N6388G
TO−220
(Pb−Free)
50 Units / Rail
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 15
1
Publication Order Number:
2N6387/D


  ON Semiconductor Electronic Components Datasheet  

2N6387 Datasheet

Plastic Medium-Power Silicon Transistors

No Preview Available !

TA TC
4.0 80
2N6387, 2N6388
3.0 60
2.0 40
1.0 20
TC
TA
0
0 20 40 60 80 100 120 140 160
T, TEMPERATURE (°C)
Figure 1. Power Derating
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
Characteristic
Symbol
Min Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 200 mAdc, IB = 0)
VCEO(sus)
Vdc
2N6387
60 −
2N6388
80 −
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
(VCE = 80 Vdc, IB = 0)
2N6387
2N6388
ICEO
mAdc
− 1.0
− 1.0
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
(VCE − 80 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
2N6387
2N6388
2N6387
2N6388
ICEX
mAdc
− 300
− 300
− 3.0 mAdc
− 3.0
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 5.0 Adc, VCE = 3.0 Vdc)
(IC = 1 0 Adc, VCE = 3.0 Vdc)
2N6387, 2N6388
2N6387, 2N6388
IEBO
hFE
− 5.0 mAdc
1000 20,000
100 −
Collector−Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 0.01 Adc)
(IC = 10 Adc, IB = 0.1 Adc)
2N6387, 2N6388
2N6387, 2N6388
VCE(sat)
Vdc
− 2.0
− 3.0
Base−Emitter On Voltage
(IC = 5.0 Adc, VCE = 3.0 Vdc)
(IC = 10 Adc, VCE = 3.0 Vdc)
2N6387, 2N6388
2N6387, 2N6388
VBE(on)
Vdc
− 2.8
− 4.5
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)
|hfe|
20 −
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob − 200 pF
Small−Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)
hfe
1000
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
http://onsemi.com
2


Part Number 2N6387
Description Plastic Medium-Power Silicon Transistors
Maker ON Semiconductor
PDF Download

2N6387 Datasheet PDF






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