Datasheet Summary
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2N6387, 2N6388
2N6388 is a Preferred Device
Plastic Medium- Power Silicon Transistors
These devices are designed for general- purpose amplifier and low- speed switching applications.
Features http://onsemi.
- High DC Current Gain
- hFE = 2500 (Typ) @ IC = 4.0 Adc
- Collector- Emitter Sustaining Voltage
- @ 100 mAdc
- -
- -
VCEO(sus) = 60 Vdc (Min)
- 2N6387 = 80 Vdc (Min)
- 2N6388 Low Collector- Emitter Saturation Voltage
- VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc
- 2N6387, 2N6388 Monolithic Construction with Built- In Base- Emitter Shunt Resistors TO- 220AB pact Package Pb- Free Packages are Available-
DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS,...
