2N6387 Datasheet | onsemi

Features http://onsemi. - High DC Current Gain - h FE = 2500 (Typ) @ IC = 4.0 Adc - Collector- Emitter Sustaining Voltage - @ 100 m Adc - - - - VCEO(sus) = 60 Vdc (Min) - 2N6387 = 80 Vdc (Min) - 2N6388 Low Collector- Emitter Saturation Voltage - VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc - 2N6387, 2N6388 Monolithic Construction with Built- In Base- Emitter Shunt Resistors TO- 220AB pact Package Pb- Free Packages are Available- DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 - 80 VOLTS MARKING DIAGRAM MAXIMUM RATINGS (Note 1) Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current - Continuous - Peak Base Current Total Power Dissipation @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C Operating and Storage Junction, Temperature Range 2N6387 2N6388 2N6387 2N6388 Symbol VCEO VCB VEB IC IB PD PD TJ, Tstg Value 60 80 60 80 5.0 10 15 250 65 0.52 2.0 0.016 - 65 to +150 Unit Vdc Vdc Vdc Adc m Adc W W/°C W W/°C °C 2N6387 Symbol Rq JC Rq JA Max 1.92 62.5 Unit _C/W _C/W 2N6387G 2N6388 2N6388G 4 TO- 220AB CASE 221A STYLE 1 1 2N638x G AYWW 2N638x = Device Code x = 7 or 8 G = Pb- Free Package A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION Device Package TO- 220AB TO- 220AB (Pb- Free) TO- 220AB TO- 220AB (Pb- Free) Shipping 50 Units / Rail 50 Units / Rail 50 Units / Rail 50 Units / Rail THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction- to- Case Thermal Resistance, Junction- to- Ambient Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. Preferred devices are remended choices for future use and best overall value. - For additional information on our Pb- Free strategy and soldering details, please...