2N6387 - Plastic Medium-Power Silicon Transistors

Features

http://onsemi. com.
High DC Current Gain.
hFE = 2500 (Typ) @ IC = 4.0 Adc.
Collector.
Emitter Sustaining Voltage.
@ 100 mAdc.
VCEO(sus) = 60 Vdc (Min).
2N6387 = 80 Vdc (Min).
2N6388 Low Collector.
Emitter Saturation Voltage.
VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc.
2N6387, 2N6388 Monolithic Construction with Built.
In Base.
Emitter Shunt Resistors TO.

ON Semiconductor

Datasheet Details

Part number	2N6387
Manufacturer	ON Semiconductor
File Size	99.62 KB
Description	Plastic Medium-Power Silicon Transistors
Datasheet	2N6387 Datasheet
Additional preview pages of the 2N6387 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com 2N6387, 2N6388 2N6388 is a Preferred Device Plastic Medium−Power Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features http://onsemi.com • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc • • • • VCEO(sus) = 60 Vdc (Min) − 2N6387 = 80 Vdc (Min) − 2N6388 Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 5.

Published: Mar 22, 2005 |