STMicroelectronics 2N6387
The 2N6387 and 2N6388 are silicon epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are inteded for use in low and medium frequency power applications.| Part No. | 2N6387 |
|---|---|
| Datasheet | 2N6387 Download |
| Manufacturer |  STMicroelectronics |
| Description | SILICO NPN POWER DARLINGTON TRANSISTORS |
| Buy | Stock & Price |
DESCRIPTION
3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol Parameter VCBO VCEV VCER VCEO VEBO IC ICM IB Ptot Tstg Tj Collector-Base Voltage (IB = 0) Collector-Emitter Voltage (VBE = -1.5V) Collector-Emitter Voltage (RBE ≤ 100Ω) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Total Dissipation at Tc ≤ 25 oC Storage Temperature Max. Operating Junction Temperature June 1997 R1 Typ. = 10 KΩ R2 Typ. = 160 Ω Value 2N6387 2N6388 60 80 60 80 60 80 60 80 5 10 15
