2N6387 Description
2N6387, 2N6388 2N6388 is a Preferred Device Plastic Medium−Power Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications.
2N6387 Key Features
- High DC Current Gain
- hFE = 2500 (Typ) @ IC = 4.0 Adc
- Collector-Emitter Sustaining Voltage
- @ 100 mAdc
- 2N6387 = 80 Vdc (Min)
- 2N6388 Low Collector-Emitter Saturation Voltage
- VCE(sat) = 2.0 Vdc (Max) @ IC = 5.0 Adc
- 2N6387, 2N6388 Monolithic Construction with Built-In Base-Emitter Shunt Resistors TO-220AB pact Package Pb-Free Packages
- 80 VOLTS
- Continuous