2N6387 - Silicon NPN Transistor

Product Overview

NTE

2N6387 Silicon NPN Transistor by NTE - Datasheet Preview — Datasheet preview – 2N6387

Datasheet Details

Part number	2N6387
Manufacturer	NTE
File Size	64.80 KB
Description	Silicon NPN Transistor
Datasheet	2N6387 Datasheet
Additional preview pages of the 2N6387 datasheet.

Product details

Description

The 2N6387 and 2N6388 are silicon NPN Darlington power transistors in a TO 220 type package designed for general purpose amplifier and low speed switching applications.

Features

D High DC Current Gain: hFE = 2500 Typ D Collector.
Emitter Sustaining Voltage (@ 100mA): 2N6387: VCEO(sus) = 60V Min 2N6387: VCEO(sus) = 80V Min D Low Collector.
Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 5A D Monolithic Construction with Built.
In Base.
Emitter Shunt Resistor Absolute Maximum Ratings: (Note 1) Collector.
Emitter Voltage, VCEO 2N6387.

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Published: Jul 5, 2020 |