2N6426 datasheet, transistors equivalent, ON Semiconductor

2N6426 Features and benefits

* These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total.

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2N6426

Darlington

Transistors

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📁 Related Datasheet

2N6420 - SILICON PNP POWER TRANSISTORS (Central Semiconductor)
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2N6420 - Silicon PNP Power Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2N6420 DESCRIPTION ·Contunuous Collector Current-IC= -1A ·Power Di.

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2N6421 - Silicon PNP Power Transistors (Inchange Semiconductor)
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2N6420 2N6421 2N6422 2N6423 SILICON PNP POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6420 series d.

2N6422 - Silicon PNP Power Transistor (INCHANGE)
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=-300V(Min) ·Minimum Lot-to-Lot variations for robust device.

2N6423 - SILICON PNP POWER TRANSISTORS (Central Semiconductor)
2N6420 2N6421 2N6422 2N6423 SILICON PNP POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6420 series d.

2N6423 - Silicon PNP Power Transistor (INCHANGE)
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : VCEO=-300V(Min) ·Minimum Lot-to-Lot variations for robust device.

2N6424 - PNP Silicon Power Transistor (Central Semiconductor)
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

2N6424 - Bipolar PNP Device (Seme LAB)
2N6424 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar PNP Device in a Herm.

2N6426 Datasheet, transistors equivalent, ON Semiconductor

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2N6426 Features and benefits