Datasheet Details
| Part number | 2N6422 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.42 KB |
| Description | Silicon PNP Power Transistor |
| Download | 2N6422 Download (PDF) |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2N6422 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 217.42 KB |
| Description | Silicon PNP Power Transistor |
| Download | 2N6422 Download (PDF) |
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·Collector-Emitter Breakdown Voltage- : VCEO=-300V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -500 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PD Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 35 W -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃ 2N6422 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=-50mA IEBO Emitter -Base Cutoff Current VBE=- 6V ICEO Collector-Emitter Cutoff Current VCB=- 150V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.75A;
IB=-0.075A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -1A;
IB=-0.125A VBE(sat)-1 Base-Emitter Saturation Voltage IC= -0.75A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N6422 | SILICON PNP POWER TRANSISTORS | Central Semiconductor |
| Part Number | Description |
|---|---|
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