| Part number | 2N6427 |
|---|---|
| Datasheet | 2N6427_FairchildSemiconductor.pdf |
| File Size | 93.90 KB |
| Manufacturer | Fairchild (now onsemi) |
| Description | NPN Darlington Transistor |
|
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2N6427 / MMBT6427 Discrete POWER & Signal Technologies 2N6427 MMBT6427 C E C B TO-92 E SOT-23 Mark: 1V B NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. See MPSA14 for characteristics.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N6427 | NPN Darlington transistor | NXP |
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2N6427 | NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR | Samsung semiconductor |
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2N6427 | Darlington Transistors | ON Semiconductor |
 |
2N6427 | NPN Darlington Transistor | National Semiconductor |
 |
2N6427 | Darlington Transistors | Motorola |
See all Fairchild (now onsemi) datasheets
| Part Number | Description |
|---|---|
| 2N6426 | NPN Darlington Transistor |
| 2N6428 | Amplifier Transistor |
| 2N6428A | NPN Epitaxial Silicon Transistor |
| 2N6076 | PNP Small Signal Transistor |
| 2N60B | 600V N-Channel MOSFET |
| 2N6517 | NPN Epitaxial Silicon Transistor |
| 2N6518 | PNP Epitaxial Silicon Transistor |
| 2N6519 | PNP Epitaxial Silicon Transistor |
| 2N6520 | PNP Epitaxial Silicon Transistor |
| 2N6755 | N-Channel Power MOSFET |
