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2N6428A - NPN Epitaxial Silicon Transistor

Key Features

  • This device is designed for high gain, general purpose amplifier.

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www.DataSheet4U.com 2N6428A NPN Epitaxial Silicon Transistor December 2006 2N6428A NPN Epitaxial Silicon Transistor Features • This device is designed for high gain, general purpose amplifier applications at collector currents from 1uA to 200 mA. tm TO92 1 2 3 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * Symbol VCBO VCEO VEBO IC PD TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation Junction Temperature Storage Temperature Range Ta = 25°C unless otherwise noted Parameter Value 60 50 5 200 625 150 - 55 ~ 150 Unit V V V mA mW °C °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.