Fairchild Semiconductor 2N6428A
NPN Epitaxial Silicon Transistor
| Part No. | 2N6428A |
|---|---|
| Datasheet | 2N6428A Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | NPN Epitaxial Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● This device is designed for high gain, general purpose amplifier applications at collector currents from 1uA to 200 mA. tm TO92 1 2 3 1. Emitter 2. Base 3. CollectorABSOLUTE MAXIMUM RATINGS
* Symbol VCBO VCEO VEBO IC PD TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation Junction Temperature Storage Temperature Range Ta = 25°C unless otherwise noted Parameter Value 60 50 5 200 625 150 - 55 ~ 150 Unit V V V mA mW °C °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operationsELECTRICAL CHARACTERISTICS
* Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE TC = 25°C unless otherwise noted Parameter Collector-Base Breakdown Voltage Collector-Emitt...
