2N6422
Description
Collector-Emitter Breakdown Voltage- : VCEO=-300V(Min) Minimum Lot-to-Lot variations for robust device Performance and reliable operation.
- Part: 2N6422
- Description: Silicon PNP Power Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 217.42 KB
Datasheets by Manufacturer
- 2N6425 — Seme LAB — Bipolar PNP Device
- 2N6426 — onsemi — Darlington Transistors
- 2N6427 — NXP Semiconductors — NPN Darlington transistor
- 2N6427 — Fairchild Semiconductor — NPN Darlington Transistor
- 2N6426 — Motorola Semiconductor — Darlington Transistors
- 2N6421 — Inchange Semiconductor — Silicon PNP Power Transistors
- 2N6427 — Samsung Semiconductor — NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
- 2N6427 — onsemi — Darlington Transistors
- 2N6428 — Samsung Semiconductor — NPN EPITAXIAL SILICON TRANSISTOR
- 2N6428A — Samsung Semiconductor — NPN EPITAXIAL SILICON TRANSISTOR