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2N6421 - SILICON PNP POWER TRANSISTORS

Download the 2N6421 datasheet PDF. This datasheet also covers the 2N6420 variant, as both devices belong to the same silicon pnp power transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2N6420-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

: The CENTRAL SEMICONDUCTOR 2N6420 series devices are silicon PNP power transistors designed for high speed switching and high voltage amplifier applications.

MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6422 2N6420 2N6421 2N6423 250 375 500 175 250 300 6.0 6.0 6.0 1.0 2.0 2.0 5.0 1.0 35 -65 to +200 5.0 UNITS V V V A A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEV VCE=225V, VBE=1.5V (2N6420) ICEV VCE=340V, VBE=1.5V (2N6421) ICEV VCE=450V, VBE=1.5V (2N6422) ICEV VCE=450V, VBE=1.5V (2N6423) ICEV VCE=225V, VBE=1.5

Overview

2N6420 2N6421 2N6422 2N6423 SILICON PNP POWER TRANSISTORS w w w.

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