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Central Semiconductor

2N6421 Datasheet Preview

2N6421 Datasheet

SILICON PNP POWER TRANSISTORS

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2N6420
2N6421
2N6422
2N6423
SILICON
PNP POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6420 series
devices are silicon PNP power transistors designed
for high speed switching and high voltage amplifier
applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
JC
2N6422
2N6420 2N6421 2N6423
250 375 500
175 250 300
6.0 6.0 6.0
1.0 2.0 2.0
5.0
1.0
35
-65 to +200
5.0
UNITS
V
V
V
A
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICEV
VCE=225V, VBE=1.5V (2N6420)
ICEV
VCE=340V, VBE=1.5V (2N6421)
ICEV
VCE=450V, VBE=1.5V (2N6422)
ICEV
VCE=450V, VBE=1.5V (2N6423)
ICEV
VCE=225V, VBE=1.5V, TC=150°C (2N6420)
ICEV
VCE=300V, VBE=1.5V, TC=150°C (2N6421)
ICEV
VCE=300V, VBE=1.5V, TC=150°C (2N6422)
ICEV
VCE=300V, VBE=1.5V, TC=150°C (2N6423)
ICEO
VCE=150V (2N6420)
ICEO
VCE=150V (2N6421, 2N6422, 2N6423)
IEBO
VEB=6.0V (2N6420)
IEBO
VEB=6.0V (2N6421, 2N6422, 2N6423)
BVCEO IC=50mA, (2N6420)
175
BVCEO IC=50mA, (2N6421)
250
BVCEO IC=50mA, (2N6422, 2N6423)
300
VCE(SAT) IC=1.0A, IB=125mA (2N6420 thru 2N6422)
VCE(SAT) IC=750mA, IB=75mA (2N6423)
VBE(SAT) IC=1.0A, IB=100mA (2N6420 thru 2N6422)
VBE(SAT) IC=750mA, IB=75mA (2N6423)
hFE VCE=10V, IC=100mA
40
hFE VCE=10V, IC=500mA (2N6420)
40
MAX
1.0
1.0
1.0
2.0
3.0
3.0
3.0
5.0
10
5.0
5.0
0.5
0.75
1.0
1.4
1.8
200
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
R1 (2-September 2014)




Central Semiconductor

2N6421 Datasheet Preview

2N6421 Datasheet

SILICON PNP POWER TRANSISTORS

No Preview Available !

2N6420
2N6421
2N6422
2N6423
SILICON
PNP POWER TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN MAX
hFE VCE=2.0V, IC=750mA (2N6423)
10 100
hFE VCE=2.0V, IC=1.0A (2N6421, 2N6422)
8.0
80
hFE VCE=10V, IC=1.0A (2N6420)
10
hfe VCE=30V, IC=100mA, f=1.0kHz
25 350
fT VCE=10V, IC=200mA, f=5.0MHz (2N6420,21,22) 10
fT
VCE=10V, IC=200mA, f=5.0MHz (2N6423)
15
Cob VCB=10V, IE=0, f=1.0MHz
120
tr VCC=200V, IC=1.0A, IB1=100mA,
RL=200Ω (2N6420, 2N6421, 2N6422)
3.0
tr VCC=200V, IC=750mA, IB1=75mA,
RL=267Ω (2N6423)
5.0
ts VCC=200V, IC=1.0A, IB1=IB2=100mA
(2N6420, 2N6421, 2N6422)
4.0
ts VCC=200V, IC=750mA, IB1=IB2=75mA (2N6423)
tf VCC=200V, IC=1.0A, IB1=IB2=100mA
(2N6420, 2N6421, 2N6422)
6.0
3.0
tf VCC=200V, IC=750mA, IB1=IB2=75mA (2N6423)
IS/b VCE=100V
150
3.0
TO-66 CASE - MECHANICAL OUTLINE
UNITS
MHz
MHz
pF
μs
μs
μs
μs
μs
μs
mA
w w w. c e n t r a l s e m i . c o m
MARKING:
FULL PART NUMBER
R1 (2-September 2014)


Part Number 2N6421
Description SILICON PNP POWER TRANSISTORS
Maker Central Semiconductor
Total Page 3 Pages
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