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  ON Semiconductor Electronic Components Datasheet  

2SA1020 Datasheet

One Watt High Current PNP Transistor

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2SA1020
Preferred Device
One Watt High Current
PNP Transistor
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VCE 50 Vdc
VCB 50 Vdc
VEB 5.0 Vdc
IC 2.0 Adc
PD 900 mW
5.0 mW/°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 1.5 W
12 mW/°C
Operating and Storage Junction Temperature TJ, Tstg −55 to
Range
+150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
RqJA
125 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
VOLTAGE AND CURRENT
ARE NEGATIVE FOR
PNP TRANSISTORS
COLLECTOR
2
3
BASE
PNP
1
EMITTER
1
23
TO−92 (TO−226)
CASE 29−10
STYLE 14
MARKING DIAGRAM
2SA
1020
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 3
1
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2SA1020/D


  ON Semiconductor Electronic Components Datasheet  

2SA1020 Datasheet

One Watt High Current PNP Transistor

No Preview Available !

2SA1020
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 V, IC = 0)
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.5 A, VCE = 2.0 V)
Collector −Emitter Saturation Voltage
(IC = 1.0 A, IB = 50 mA)
Base −Emitter Saturation Voltage (IC = 1.0 A, IB = 50 mA)
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 3)
(IC = 500 mAdc, VCE = 2.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%.
2. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%.
3. fT is defined as the frequency at which |hfe| extrapolates to unity.
Symbol
Min Max
Unit
V(BR)CEO
ICBO
IEBO
50
Vdc
mAdc
1.0
1.0 mAdc
hFE
VCE(sat)
VBE(sat)
fT
70 240
40 −
− 0.5
− 1.2
100 −
Vdc
Vdc
MHz
ORDERING INFORMATION
Device
Package
Shipping
2SA1020
2SA1020G
TO−92
TO−92
(Pb−Free)
5000 Units / Box
2SA1020RLRA
2SA1020RLRAG
TO−92
TO−92
(Pb−Free)
2000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2


Part Number 2SA1020
Description One Watt High Current PNP Transistor
Maker ON Semiconductor
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2SA1020 Datasheet PDF






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